Moroz V. – TechConnect Briefs

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

A 3D Mesh Generation Method for the Simulation of Semiconductor Processes and Devices

Lilja K., Moroz V., Wake D., Technology Modeling Associates, Inc., US

We present an extended quadtree-octree mesh generation method which is well suited for semiconductor process and device simulation. The method can handle complicated geometries and moving boundaries. In order to describe boundaries and trace boundary [...]

Rational RSM Models for Device Characteristics as Functions of Process Parameters

Granik Y., Moroz V., PDF Solutions, Inc., US

Conventional polynomial Response Surface Methodology (RSM) fails to provide oscillation-free analytical models for some device data with singularity like subthreshold slope vs threshold adjustment dose, poly gate length vs stepper defocus, etc. New type of [...]