Heterogeneous Nano-electronic Devices Enabled by Monolithic Integration of IIIV, Ge, and Si to expand future CMOS functionality
Thean A.V-Y., Collaert N., Waldron N., Merckling C., Witters L., Loo R., Mitard J., Rooyackers R., Vandooren A., Verhulst A., Veloso A., Pourghaderi A., Eneman G., Yakimets D., Huynh Bao T., Garcia Bardon M., Ryckaert J., Dehan M., Wambacq P., Caymax M., IMEC, BE
3D-IC’s by stacking and connecting dies of different functions with through-silicon via processes are emerging as an upcoming heterogeneous SOC enabler. Since connectivity between stacked layers may be limited by nearest-neighbor layers, the stagnation of [...]