Lo S-C – TechConnect Briefs

Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

Chou H-M, Lo S-C, Tsai J-H, Li Y., NCHC, TW

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of [...]

A Study of the Threshold Voltage Variations for Ultra-thin Body Double Gate SOI MOSFETs

Tang C-S, Lo S-C, Lee J.W., Tsai J-H, Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Double gate silicon on insulator (SOI) devices are more and more attractive for sub-50 nm ultra-large scaled integrated (ULSI) circuits manufacturing. The double gate SOI devices, owing to a difficulty of manufacturing uniformity, suffer fluctuations [...]