Comprehensive Characterization and Analysis of RTS, 1/f, RF Noise and Power Performances of Schottky-Diode in Standard CMOS
Xiong Y.Z., Lo G.Q., Loh W.Y., Shi J.L., Yu M.B., Loh W.Y., Kwong D.L., Institute of Microelectronics, Singapore, SG
This study presents comprehensive characterization of Schottky-diode in standard CMOS on its DC, low-frequency and RF noise performance. Random-telegraph-signal (RTS) and 1/f noise have been characterized, along with RF noise, power performances analysis. Results showed [...]