Li Y. – Page 5 – TechConnect Briefs

A Unified Compact Model for Electrostatic Discharge Protection Device Simulation

Chou H-M, Cho Y-Y, Chou H-M, Lee J.W., Li Y., National Chiao Tung University, TW

In modern microelectronics manufacturing, whole chip electrostatic discharge (ESD) protection circuit design is necessary for obtaining robust electrical performance [1-5]. In designing the whole chip ESD protection circuit, owing to its high circuit complexity, an [...]

Mechanical Parameter Extraction of Thin-Film Coated Materials

Li Y., Tseng K.K., Vanderbilt University, US

Materials coated with thin-films have become popular in many advanced applications. The thin layer of high-strength coating can improve the performance of the material. However, challenges arise when characterizing or extracting mechanical parameters for this [...]

Investigation of Robust Fully-Silicided NMOSFETs for Sub-100 nm ESD Protection Circuits Design

Lee J.W., Tang H., Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Electrostatic discharge (ESD) becomes an important issue in vary large scaled integrated (VLSI) circuit design and manufacture, especially for the ultra-thin oxide nano-devices [1-3]. It results from a fact that the gate oxide will be [...]

A Study of the Threshold Voltage Variations for Ultra-thin Body Double Gate SOI MOSFETs

Tang C-S, Lo S-C, Lee J.W., Tsai J-H, Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Double gate silicon on insulator (SOI) devices are more and more attractive for sub-50 nm ultra-large scaled integrated (ULSI) circuits manufacturing. The double gate SOI devices, owing to a difficulty of manufacturing uniformity, suffer fluctuations [...]

Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings

Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

We investigate the effect of spin-orbit interaction on the electron energy states in nanoscale semiconductor quantum rings. The effective one-band Hamiltonian approximation with the spin-dependent Ben Daniel-Duke boundary conditions is formulated and solved numerically. Due [...]

A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation

Lin H-Y, Li Y., Lin H-Y, Lee J.W., Chiu C-M, Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Excimer laser annealing technique has been proposed in the fabrication of low temperature polycrystalline silicon (LTPS) in the recent years, in particular for the applications to active-matrix liquid crystal display (AMLCD) [1]. In comparing with [...]

Gate Length Scaling Effects in ESD Protection Ultra-thin Body SOI Devices

Lee J.W., Li Y., Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

In this paper we experimentaly explore the gate length scaling effects which related to the abrupt degation of electrostatic discharge (ESD) robustness for ultra-thin body silicon on insulator (SOI) devices and integrated circuits (ICs). It [...]

A Computational Investigation of Electron Energy States for Vertically Coupled Semiconductor Quantum Dots

Li Y., Lu H-M., National Nano Device Laboratories and National Chiao Tung University, TW

We study the induced property of ground and excited state energies of electrons confined in 3D nanostructures that the In_xGa_1-xAs QDs are embedded into GaAs matrix and have a vertically coupled topology. The disk-(DI) and [...]

A Computational Efficient Algorithm for Protein Sequence Classification

Li Y., Lu H-M., National Nano Device Laboratories and National Chiao Tung University, TW

The protein sequence analysis has been of great interests recently. Through the protein data bank, a protein sequence is easy obtained and ready analyzed for various studies and applications. Conventional neural network and genetic algorithm [...]

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Li Y., Voskoboynikov O., Lee C.P., National Nano Device Laboratories, TW

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, [...]