Li T-Y – TechConnect Briefs

Characteristic Variability of Novel Lateral Asymmetry Nano-MOSFETs Due to Random Discrete Dopants

Lee K-F, Hwang C-H, Li T-Y, Li Y., Li T-Y, Li Y., National Chiao Tung University, TW

In this paper, we for the first time investigate the random-dopant-induced device DC, the gate capacitance, the timing, and the high frequency characteristics fluctuations in nanoscale LAC devices. The conventional LAC device with higher channel [...]

Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices

Li T-Y, Li Y., Hwang C-H, Li T-Y, Li Y., National Chiao Tung University, TW

The magnitude of the intrinsic parameter fluctuations, such as process-variation and random dopant fluctuation, steadily increase with the reduction of device dimensions, and lead to pronounced component mismatch in area constrained circuits such as static [...]

Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices

Hwang C-H, Cheng H-W, Yeh T-C, Li T-Y, Li Y., Huang H.M., Li T-Y, Li Y., National Chiao Tung University, TW

Impact of the intrinsic fluctuations on device characteristics, such as the threshold voltage (Vth) fluctuation is crucial in determining the behavior of nanoscale semiconductor devices. The fluctuations are pronounced for continuously shrunk CMOS devices. To [...]