Laudon M. – TechConnect Briefs

Effect of Stress on Dopant Diffusion in Si

Daw M.S., Windl W., Laudon M., Clemson University, US

We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in [...]

Multiscale Modeling of Stress-Mediated Diffusion in Silicon, Ab Initio to Continuum

Windl W., Laudon M., Daw M.S., Carlson N.N., Masquelier M.P., Motorola, Inc., US

The introduction of new ‘back end’ materials, as well as the further scaling of silicon device dimensions, has raised the level of stress in dvice structures. Current engineering simulations of diffusion neglect the direct effect [...]