Lamba V.K. – TechConnect Briefs

Modeling of Electronic Transport in Molecular Devices

Lamba V.K., Engles D., Malik S.S., Verma M., HCTM Kaithal, IN

Abstract— In this paper a novel approach for simulating electronic transport in nanoscale structures is introduced. We consider an open quantum system (the electrons of structure) accelerated by an external electromotive force and dissipating energy [...]

Design of Multi – Dimensional Variable Capacitors for RF MEMS

Lamba V.K., Engles D., Malik S.S., Gupta A., HCTM Kaithal, IN

Abstract— In this work, a multi dimensional RF MEMS variable capacitor that utilizes electrostatic actuation is designed. Here we preferred Electrostatic actuation due to its low power consumption. The RF MEMS variable capacitor is designed [...]

Quantum transport in nano mosfets

Lamba V.K., Engles D., Malik S.S., Gupta A., HCTM Kaithal, IN

Various quantum mechanical formulations have been used for the modeling of the carrier transport in semiconductor devices. During the 1980s advances in the semiconductor technology made it possible to fabricate conductors so small that the [...]

Multiple gate approach – solution of scaling and nano MOSFETS

Lamba V.K., Engles D., Malik S.S., Haryana College of Technology & Management,Kaithal, IN

In the sub-50nm scale, the aggressive scaling of MOSFETs is expected to culminate in dual-gate (DG) architectures on SOI substrates. DG MOSFETs are widely accepted to be the ultimate design that silicon can deliver in [...]