Lake R. – TechConnect Briefs

The Effect of Source/Drain Extension Asymmetry on the Leakage Current of Ohmicly-contacted Carbon Nanotube FETs

Alam K., Lake R., University of California Riverside, US

The geometry dependence of the leakage current by modeling the effect of source/drain extension asymmetry on the leakage current of CNTFETs with 20 nm wrap-around gates is investigated. The symmetric geometry has the highest leakage [...]

Hybrid Nanomaterials for Active Electronics and Bio-Nanotechnology

Wang X., Pandey R.R., Lake R., Ozkan C.S., University of California Riverside, US

We describe self assembly processing of functional carbon nanotubes using single strand deoxyribonucleic acid (DNA) and peptide nucleic acid (PNA) fragments. Previous research has shown the self assembly of carbon nanotubes to quantum dots via [...]

Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures

Rivas C., Lake R., University of California, US

Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to [...]