Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor
Kumar S.P., Agrawal A., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Device Research Laboratory, IN
HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]