Kumar D.V. – TechConnect Briefs

Simulation Study of Non-Quasi Static Behaviour of MOS Transistors

Kumar D.V., Thakker R.A., Patil M.B., Rao V.R., Indian Institute of Technology - Bombay, IN

In this paper, we study the "non-quasi static" (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT) [1] MOSFET model implemented in a general-purpose circuit simulator SEQUEL [2], device simulator ISE-TCAD [...]