Kolberg S. – TechConnect Briefs

Capacitance modeling of Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

Based on our framework model of the electrostatics and the drain current in short-channel, nanoscale DG and GAA MOSFETs, we here present a corresponding model for the device capacitances covering all regimes of operation from [...]

Compact Modeling Framework for Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

To achieve sufficient accuracy in the compact modeling of short-channel, nanoscale DG and GAA MOSFETs, the multi-dimensionality of the body potential and the electronic charge distribution has to be accurately described. In sub-threshold, the device [...]

Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques

Fjeldly T.A., Kolberg S., Norwegian University of Science and Technology, NO

In nanoscale double gate MOSFETs, the dependence on the bias voltages of the 2D electron barrier topology in the conducting channel is all-important for the operation of the device. We consider a DG MOSFET with [...]