Keshavarz A.A. – TechConnect Briefs

Process Sensitivity Analysis of a 0.25-um NMOS Transistor Using Two-Dimensional Simulations

Keshavarz A.A., Laurent L.F., Leonardi P.C., STMicroelectronics, US

This work attempts to predict the sensitivity of the 0.25-um NMOS transistor characteristics and parameters to selected manufacturing process steps. The transistor is on the 0.25um line of production in STMicroelectronics. The methdology uses two-dimensional [...]

Mobility Degradation and Current Loss Due to Vertical Electric Field in Channel Area of Submicron MOS Devices

Keshavarz A.A., Walters J.L., Sampson R., STMicrolectronics, US

In this work we show quantified modeling results for the effect of gate-voltage-induced mobility degradation on MOS device current. Presented results are for three technologies, i.e. 0.50 mm, 0.35mm, and 0.25mm, and are based on [...]