Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs
Kernstock C., Karner M., Baumgartner O., Gehring A., Holzer S., Kosina H., Global TCAD Solutions, AT
An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows [...]