Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode
Im K., Ahn C-G, Yang J.H., Baek I-B, Choi C-J, Lee S., Hwang H., Cho W-J, Choi C-J, Electronics and Telecommunications Research Institute, KR
UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining [...]