Hwang C-H – TechConnect Briefs

Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio

Cheng H-W, Hwang C-H, Li Y., National Chiao Tung University, TW

For nano-CMOS device design, the device with multiple-fin structure has the superior short channel effect (SCE), high driving current and has been considered as an index as potential candidates. The feasibility of various multi-fin options [...]

Characteristic Variability of Novel Lateral Asymmetry Nano-MOSFETs Due to Random Discrete Dopants

Lee K-F, Hwang C-H, Li T-Y, Li Y., Li T-Y, Li Y., National Chiao Tung University, TW

In this paper, we for the first time investigate the random-dopant-induced device DC, the gate capacitance, the timing, and the high frequency characteristics fluctuations in nanoscale LAC devices. The conventional LAC device with higher channel [...]

Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices

Li T-Y, Li Y., Hwang C-H, Li T-Y, Li Y., National Chiao Tung University, TW

The magnitude of the intrinsic parameter fluctuations, such as process-variation and random dopant fluctuation, steadily increase with the reduction of device dimensions, and lead to pronounced component mismatch in area constrained circuits such as static [...]

Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices

Hwang C-H, Cheng H-W, Yeh T-C, Li T-Y, Li Y., Huang H.M., Li T-Y, Li Y., National Chiao Tung University, TW

Impact of the intrinsic fluctuations on device characteristics, such as the threshold voltage (Vth) fluctuation is crucial in determining the behavior of nanoscale semiconductor devices. The fluctuations are pronounced for continuously shrunk CMOS devices. To [...]

High-Frequency Characteristic Optimization of Heterojunction Bipolar Transistors

Li Y., Hwang C-H, Chen Y-C, National Chiao Tung University, TW

In this paper, an optimization technique (so-called the geometric programming) is employed to optimize the base doping and Ge-dose for SiGe HBTs with high cut-off frequency and base-collector current gain. This work first formulates Kroemer’s [...]

High Frequency Characteristics of Nanoscale Silicon Nanowire FET

Li Y., Hwang C-H, National Chaio Tung University, TW

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving the high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar [...]

Random Discrete Dopant Fluctuated Sub-32 nm FinFET Devices

Li Y., Hwang C-H, Yu S-M., Huang H.M., Chen H-M, National Chaio Tung University, TW

Scaling of silicon production technology has approached the sub-65nm regime. Device’s electrical characteristics fluctuate according to the discreteness and randomness of dopants in sub-32nm technologies. In this paper, we investigate the random-dopant-induced electrical characteristics fluctuations, [...]