Hussin H. – TechConnect Briefs

Investigation on Impact of Different Defects based on Different Trap Energy Level in the Framework of Two-Stage NBTI model

Hussin H., Soin N., Bukhori M.F., Universiti Teknologi MARA, MY

Charges in gate dielectric significantly degraded the p-MOSFET device performances particularly due to NBTI phenomenon. The validation of NBTI effects on device and circuit performance require accurate model to ensure reliable prediction during design phase. [...]

Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of two-stage NBTI model

Hussin H., Soin N., Bukhori M.F., Universiti Teknologi MARA, MY

We investigate the subthreshold operation effects on NBTI reliability issues in the framework of two-stage NBTI model. This is to include the effect of oxide trap since most previous simulation-based study only focuses on interface [...]