Huang G.W. – TechConnect Briefs

Characterization and Modeling of Silicon Tapered Inductors

Peng A.S., Chen H.Y., Chen K.M., Huang G.W., Wang S.C., Chen H.Y., Chen K.M., Chang C.Y., National Nano Device Laboratories, TW

The characteristics of tapered inductors and standard inductors have been compared, and an improved compact model for tapered inductors is presented. The measured data of spiral inductors shows that the tapered inductor has higher quality [...]

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

Wang S.C., Huang G.W., Chen K.M., Peng A.S., Tseng H.C., Hsu T.L., National Nano Device Laboratories, TW

In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed [...]

An Automatic Macro Program developed for Characterization, Parameter Extraction and Statistic Analysis of Spiral Inductors

Huang G.W., Chiu D.Y., Chen K.M., National Nano Device Laboratories, TW

In the paper, a macro program based on Agilent IC-CAP software is developed for characterization, parameter extraction and statistic analysis of on chip spiral inductors. All procedures can be finished very easily in few buttons [...]