Ho H-M – TechConnect Briefs

Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation

Loiko K.V., Peidous I.V., Ho H-M, Lim D.H., Chartered Semiconductor Manufacturing Ltd., SG

The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process [...]

Methodology for Calibrating Process and Device Simulators by Extracting Model Parameters from Electrical Data

Ho H-M, Zu Y., Loiko K.V., Lim D.H.Y., Chartered Semiconductor Manufacturing Ltd., SG

This paper describes a physically based methodology for calibrating 2D semiconductor process and device simulators. The calibration begins with the determination of 1D and 2D doping profiles by means of extracting model parameters from electrical [...]