Hess K. – TechConnect Briefs

Ion Channel Simulations by the TR-PNP Model and the Excess Chemical Potential Approach

Hu S., Hess K., Beckman Institute, University of Illinois at Urbana-Champaign, US

We describe a new method referred to as TR-PNP model to study general types of nanostructure ion channels. Our method extends the common continuum methods to include particle like properties, such as the ion trapping [...]

Principles of Metallic Field Effect Transistor (METFET)

Rotkin S.V., Hess K., University of Illinois at Urbana-Champaign, Beckman Institute for Advanced Science and Technology, US

Field effect transistors in current use are semiconductor devices. The scaling trend to nanometer dimensions calls for ever higher doping and channel conductance of these devices. Ultimately one desires a conductance close to that of [...]

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

McMahon W., Matsuda K., Lee J., Hess K., Lyding J., University of Illinois, US

An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed [...]