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HomeAuthorsHarrison S.

Authors: Harrison S.

Microsphere Resonators for Biodetection

Echeveria L., Gilmore S., Demory B., Tolfa C., Harrison S., Chavez G., Chang A., Singh P., Bond T., Lawrence Livermore National Laboratory, US
Whispering Gallery Mode microresonators are suitable for biosensing applications as they exhibit large Quality factors (Q) capable of sensing single nanoparticles, while also showcasing a dramatically reduced footprint compared to standard optical sensing techniques. The [...]

Compact Model of drain-current in Double-Gate MOSFETs including carrier quantization and short-channel effects

Loussier X., Munteanu D., Autran J-L, Harrison S., Cerutti R., L2MP, FR
Double-Gate (DG) structure has been in the last years the object of intensive research because its enormous potentiality to push back the integration limits to which conventional devices are subjected. Although the operation of DG [...]

Compact Modeling of Threshold Voltage in Double-Gate MOSFET including Quantum Mechanical and Short Channel Effects

Nehari K., Munteanu D., Autran J-L, Harrison S., Tintori O., Skotnicki T., L2MP-CNRS, FR
Compact modeling of Double-Gate MOSFET incites very much interest presently, since DG is considered to be the best candidate for the integration at the end-of-roadmap. The aim of this work is to develop a short-channel [...]

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T., CNRS, FR
A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

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