Hanawa H. – TechConnect Briefs

Analysis of Breakdown Characteristics of Field-Plate AlGaN/GaN HEMTs with a High-k Passivation Layer

Kabemura T., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. As another way [...]

Simulation of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

Nakano K., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. However, it increases the parasitic capacitance, leading to the degradation of high-frequency performance. As another way to improve [...]

Simulation of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs with Double Passivation Layers

Horio K., Hanawa H., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs [1, 2]. However, it increases the parasitic capacitance, leading to the degradation of high-frequency performance. As another way [...]

Effects of Buffer Acceptors on Breakdown Voltages of AlGaN/GaN HEMTs with a High-k Passivation Layer

Kawada Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high-power switching devices. However, the breakdown voltage is known to be greatly lower than that theoretically predicted. To improve the breakdown [...]

Simulation of Buffer Current Effects on Breakdown Voltage in AlGaN/GaN HEMTs Having Passivation Layers with Different Permittivity

Satoh Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of filed plate enhances the breakdown voltage in AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. However, the field [...]

Simulation of High-k Passivation-Layer Effects on Breakdown Voltage in AlGaN/GaN HEMTs

Hanawa H., Satoh Y., Horio K., Shibaura Institute of Technology, JP

A two-dimensional analysis of breakdown characteristics in AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of an off-state breakdown voltage on the [...]

Analysis of Breakdown Characteristics in Gate and Source Field-Plate AlGaN/GaN HEMTs

Onodera H., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great attention because of their applications to high-power microwave devices. It is known that the introduction of field plate enhances the power performance of AlGaN/GaN HEMTs, because the off-state breakdown [...]