Gupta N. – TechConnect Briefs

Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications

Kumar A., Gupta N., Chaujar R., Delhi Technological University, IN

In this paper, small signal behavior have been investigated for Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Y-parameters and Z-parameters, the results are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency [...]

TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]

TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]

Reconfigurable RF Front End Section of Mobile

Chawla K., Chawla P., Saluja N., Chawla K., Chawla P., Gupta N., Chhikara A., Kaur K., Suman S.K., KITM,kurukshetra, IN

In this proposal, the application of MEMS technology with a focus on RF applications in the design of next generation mobile terminal is taken up. RF MEMS switches have displayed excellent RF characteristics, including lower [...]