Ghaffour M. – TechConnect Briefs

Investigation of the In2O3 oxide grown by electron beam on the In metal and on the InP

Hamaidaa K., Bouslamaa M., Ghaffour M., Ouerdane A., Lounis Z., Ia A.A.S.S.A.L., Nouri A., Besahraoui F., Nouri A., university of temouchent, DZ

Our results are based on the use of the analysis techniques such as the Auger Electron Spectroscopy (AES) and the Electron Energy Loss Spectroscopy (EELS) which are well appropriated to study the surface of point [...]

Study of ZnO/InP by AES and EELS associated to CASINO simulation for use as solar cells

Ouerdane A., Bouslam M., Ghaffour M., Abdellaoui A., Jardin C., Centre Universitaire Khemis Miliana, AS

Abstract: ZnO is a metallic oxide ,its electrical resistivity (10--5Ωcm) and its high transmittance (80–90%) in the visible range give it a particular importance as electrode for photovoltaic conversion in solar cells. In the ten [...]