Investigation of the In2O3 oxide grown by electron beam on the In metal and on the InP

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Our results are based on the use of the analysis techniques such as the Auger Electron Spectroscopy (AES) and the Electron Energy Loss Spectroscopy (EELS) which are well appropriated to study the surface of point of view physical structure and chemical environment. The shape of AES and EELS spectra displayed the development of In2O3 oxide of small size on the irradiated area of InP semiconductor. Our experimental results related to the interaction process electrons-matter were associated to the simulation method TRIM (Transport and Range of Ions on Matter).

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2014: Graphene, CNTs, Particles, Films & Composites
Published: June 15, 2014
Pages: 470 - 473
Industry sector: Advanced Materials & Manufacturing
Topics: Materials Characterization & Imaging
ISBN: 978-1-4822-5826-4