Analytical Drain Current Model for Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects
Gautam R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN
The Cylindrical Gate All Around (GAA) Nanowire MOSFET exhibits strong drive currents and reduced short channel effects due to enhanced gate control and high surface quality of NW channels [1]. Apart from short channel immunity, [...]