Felsl H.P. – TechConnect Briefs

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

Felsl H.P., Wachutka G., Münich University of Technology, DE

We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky [...]