Dunham S.T. – TechConnect Briefs

Process Modeling Based on Atomistic Understanding for State of the Art CMOS Device Design

Chakravarthi S., Diebel M., Chidambaram P.R., Ekbote S., Dunham S.T., Machala C.F., Johnson S., Texas Instruments, US

Atomistic modeling methods are emerging as a powerful tool to understand the physical behavior of complex systems. However, continuum process simulators are the core of state of the art TCAD simulators and substantial challenges must [...]

Theoretical Investigations of Diffusion and Clustering in Semiconductors

Uberuaga B.P., Henkelman G., Jonsson H., Dunham S.T., Windl W., Los Alamos National Lab, US

Density functional theory studies of two systems have been conducted: mechanisms of self-diffusion in Ge and clustering of B in Si. In the case of self-diffusion of Ge, we find for the vacancy mechanism within [...]

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Windl W., Stumpf R., Masquelier M., Bunea M., Dunham S.T., Motorola, US

First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]

Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes

Dunham S.T., Boston University, US

In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large [...]

DOPDEES/PMM: A System for Portable Model Description

Gencer A.H., Dunham S.T., Boston University, US

We have developed a multi-purpose partial differential equation solver, DOPDEES, which is capable of solving initial value problems in one spatial dimension using a finite differences method. The system of partial fferential equations is specified [...]