Chou H-M – TechConnect Briefs

Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

Chou H-M, Lo S-C, Tsai J-H, Li Y., NCHC, TW

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of [...]

A Unified Compact Model for Electrostatic Discharge Protection Device Simulation

Chou H-M, Cho Y-Y, Chou H-M, Lee J.W., Li Y., National Chiao Tung University, TW

In modern microelectronics manufacturing, whole chip electrostatic discharge (ESD) protection circuit design is necessary for obtaining robust electrical performance [1-5]. In designing the whole chip ESD protection circuit, owing to its high circuit complexity, an [...]