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HomeAuthorsChoi C-J

Authors: Choi C-J

Plasmonic nanodome array fabricated on plastic as a dual-mode surface plasmon resonance and surface-enhanced Raman scattering sensor

Choi C-J, Semancik S., National Institute of Standards and Technology, US
Label-free optical sensors have recently emerged as a highly sensitive approach for detecting a broad range of chemical and biological analytes that include illicit drug compounds, explosives, proteins, viruses, and bacteria.To best meet such diverse [...]

Nanomaterials-Enabled Photonic and Chemiresistive Sensing of Chemicals and Biochemicals

Choi C-J, Benkstein K.D., Rogers P.H., Montgomery C.B., Semancik S., National Institute of Standards and Technology, US
Contact events occurring between target species and surface sites on sensing materials initiate front-end interactions and subsequent transduction processes that can yield viable signals for target detection. By offering high surface-to-volume ratios, and specialized properties, [...]

New process for fabrication of microcomponents using metal nanopowder

Lee H.M., Choi C-J, Korea Institute of Machinery and Materials, KR
We developed a new process to manufacture a soft mould for the small parts using two kinds of polymer, SU-8 for a master mould and Polydimethylsiloxane (PDMS) for a soft mould and produced the small [...]

Fabrication of microcomponent using Fe based nanopowders

Choi C-J, Lee H.M., Korea Institute of Machinery and Materials, KR
The metallic microcomponents were fabricated by pressureless sintering of nano-sized pure Fe and 17-4 PH stainless steel nanopowders. The compacting and sintering behaviors of nanosized Fe powders have been evaluated and compared with those of [...]

Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode

Im K., Ahn C-G, Yang J.H., Baek I-B, Choi C-J, Lee S., Hwang H., Cho W-J, Choi C-J, Electronics and Telecommunications Research Institute, KR
UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining [...]

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