Chen T.W. – TechConnect Briefs

Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials

Dutton R.W., Liu Y., Choi C-H, Chen T.W., Stanford University, US

This simulation work discusses the impact of direct gate tunneling on effective mobility extraction methods, particularly the Inversion Charge Pumping (ICP) method proposed recently for transistors with high-k gate dielectrics. The valence-band electron gate tunneling [...]