Chang H-T – TechConnect Briefs

Random Dopant Fluctuation in 10-nm-Gate Multi-Channel Gate-All-Around Nanowire Field Effect Transistors

Chang H-T, Li Y., National Chiao Tung University, TW

This paper, for the first time, studies the random dopant fluctuation (RDF) in the 10-nm-gate multi-channel gate-all-around nanowire field-effect transistors (FETs). To characterize device’s physical and electrical characteristic fluctuation, a 3D statistically atomistic approach to [...]

On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps

Li Y., Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chang H-T, National Chiao Tung University, TW

Abstract – In this work, we statistically study characteristic fluctuation of 16-nm-gate high-/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-k/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs [...]

Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-k/Metal Gate Bulk and SOI FinFETs

Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chang H-T, Li Yiming, National Chiao Tung University, TW

This work studies the metal gate’s work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method [...]