Quantum Dot Gate InGaAs FETs
Jain F., Suarez E., Gogna M., Chan P-Y., Karmakar S., Fikiet J., Miller B., Heller E., University of Connecticut, US
This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTe- ZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface [...]