Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET
Malik P., Chajaur R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN
In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS [...]