SOS Gate Capacitance Modeling
A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]
Authors: Abebe H.
MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation
The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]
Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS
Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]
Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices
Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]
Quantum mechanical effects correction models for inversion charge and I-V characteristics of the MOSFET device
A 1-dimensional analytic quantum mechanical effects correction formula for the MOSFET inversion charge and I-V characteristics are derived from the density gradient (DG) model using matched asymptotic expansion techniques. The primary theoretical framework for this [...]