Visvesvaraya National Institute of Technology Nagpur

First principle study of Germanium and Selenium doped monolayer black phosphorus

Tejaswi Issarapu C.S., Junghare R.C., Patil G.C., Visvesvaraya National Institute of Technology Nagpur, IN

Within the framework of density functional theory, we investigate the effects of dopants germanium and selenium on the electronic properties of monolayer black phosphorus. Dopants are introduced in two possible chemisorption and substitution configuration. Findings [...]

Ab-initio tight binding Hamiltonian generation for 1D and 2D MoS2 based Devices

Junghare R.C., Patil G.C., Visvesvaraya National Institute of Technology Nagpur, IN

In this work electronic structure of mono layer MoS2 is analysed by using density functional theory (DFT) and wannierised tight binding approach. The DFT analysis is performed by open source tool Quantum ESPRESSO and wannierised [...]

Effect of Strain on Electronic Transport in Silicene Nanoribbon using Tight Binding Model

Shukla A., Junghare R.C., Patil G.C., Visvesvaraya National Institute of Technology Nagpur, IN

In this paper, we investigate the effect of strain on silicene nanoribbon by using tight binding model.Using appropriate models for silicene, we apply a variable strain to Silicene nanoribbon and analyzed the impact of strain [...]