Measurement of Figure of Merit for a Single β-Silicon Carbide Nanowire by the Four-Point Three-ω Method
The thermoelectric figure of merit (ZT) of a single β-Silicon Carbide (SiC) nanowire (NW) was measured using the four-point three-omega (3-ω) method for the first time. The electrical conductivity (σ), thermal conductivity (κ), and Seebeck [...]