Measurement of Figure of Merit for a Single β-Silicon Carbide Nanowire by the Four-Point Three-ω Method

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The thermoelectric figure of merit (ZT) of a single β-Silicon Carbide (SiC) nanowire (NW) was measured using the four-point three-omega (3-ω) method for the first time. The electrical conductivity (σ), thermal conductivity (κ), and Seebeck coefficient (S) were measured on the same measurement platform consisting of four point probe. To this end, we developed a novel technique in which focused ion beam (FIB) lithography is employed for fabricating a measurement platform and placing a single NW. The electrical conductivity was measured to be a few tens of µA at 1V gate voltage and the thermal conductivity was shown to be 82 6 W/mK. The Seebeck coefficient was obtained to be 2mV/K by using the same measurement platform. Therefore, ZT was measured to be 0.067. Thus this type of novel platform for the thermoelectric characterization easily provides the integrated formulation for electrical and thermal characterizations and even for an optical characterization.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 202 - 205
Industry sector: Advanced Materials & Manufacturing
Topicss: Advanced Manufacturing, Nanoelectronics
ISBN: 978-1-4398-3402-2