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HomeAffiliationsTsinghua University

Affiliations: Tsinghua University

Passive Elements Modeling in Microwave/Millimeter-wave application

Wang Y., Yao J., Luo J., Tang Y., Tsinghua University, CN
Passive elements (e.g., transmission line, transformer and balun) are widely used in Microwave/ Millimeter-wave (MMW) applications. Compared with time-consuming Electromagnetic (EM) simulation, equivalent-circuit compact models for these passive elements are more preferable for IC designers. [...]

Research on Non-linear Vibration in Micro-machined Resonant Accelerometer

Shuming Z., Yunfeng L., Fan W., Jingxin D., Tsinghua University, CN
This paper analyses the non-linear vibration of the Silicon Oscillating Accelerometer (SOA) by system modeling and simulation, and the optimization designation to weaken the influence of the nonlinear vibration are proposed. With the decreasing of [...]

Experimental analysis of the MEMS Capacitive accelerometer’s shock resistibility

Tao Y., Liu Y., Dong J., Tsinghua University, CN
The shock resistibility of MEMS device has been an urgent issue in the field of consumer electronics, automotive industry and special military applications. The paper analyses experimentally the shock resistibility of a typical MEMS capacitive [...]

Fetal Movement Detection Based on MEMS Accelerometer

Minjie L., Yongkang T., Yunfeng L., Song Y., Jingxin D., Tsinghua University, CN
Fetal movement is a significant indication of fetal well-being. Standard clinical fetal monitoring technologies include ultrasound imaging and cardiotocography. Both have limited prognostic value and require many health resources. We have recently developed a low-cost, [...]

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Xiong W., Tsai M-C, Zhang J., Yu Z., Tsinghua University, CN
Resolution Enhancement Technologies (RETs) are widely used to cope with the severe optical effects that are manifests in sub-wavelength lithography. Inverse Lithography Technique (ILT) has recently been proposed [1-3] as an effective RET for sub [...]

Thermal conductivity enhancement of carbon nanotube composites

Deng F., Zheng Q.-S., Tsinghua University, CN
Simple models for the thermal conductivity enhancements of carbon nanotube (CNT) composites are presented as analytical functions of volume fraction, anisotropic thermal conductivities, aspect ratio, non-straightness, and interfacial thermal resistance of the CNTs. The model [...]

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Yu Z., Zhang D., Tian L., Tsinghua University, CN
As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]

A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

Zhang D., Yu Z., Tian L., Tsinghua University, CN
A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the [...]

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Yu Z., Zhang D., Tian L., Tsinghua University, CN
As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]

A Novel Structure for PZT-Based Piezoelectric Microphone

Zhao H.J., Ren T.L., Liu J.S., Liu L.T., Liu J.S., Liu L.T., Li Z.J., Liu J.S., Liu L.T., Tsinghua University, CN
Microphone is one of the most challenging and developing areas and markets in the field of microsensor technology. Piezoelectric microphones have the advantages of simple fabrication process and easy to be integrated into semiconductor devices [...]

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