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HomeAffiliationsPortland State University

Affiliations: Portland State University

Title: Nano/micro-structures formation driven by local protonation of polymer thin films via dip-pen nanolithography

Maedler C., Chada S., La Rosa A., Yan M., Portland State University, US
SUMMARY Nanostructures are created by stimulating the mechanical response of polymer materials upon confining protonation reaction locally via dip-pen. ABSTRACT While dip-pen nanolithography uses a sharp tip to anchor molecules on the substrate to form [...]

Image-based Nanocrystallography in Two and Three Dimensions with

Moeck P., Bjorge R., Fraundorf P., Portland State University, US
It is well known that many nanocrystals can not be identified from their powder X-ray diffraction pattern as it is customary for collections of micrometer sized crystals. The crystallographic phase and shape of nanocrystals can, [...]

Lattice Fringe Fingerprinting in Two Dimensions with Database Support

Moeck P., Seipel B., Bjorge R., Fraundorf P., Portland State University, US
Direct space high-resolution phase-contrast transmission electron microscopy (HRTEM) and atomic resolution Z-contrast scanning TEM (Z-STEM), when combined with tools for image-based nanocrystallography possess the capacity to derive the crystallographic phase and shape of nanocrystals. This [...]

Structural and Morphological Transformations in Self-Assembled Sn Quantum Dots in Si Matrix

Moeck P., Lei Y., Topuria T., Browning N.D., Ragan R., Min K.S., Atwater H.A., Portland State University, US
Transmission electron microcopy (TEM) in both the parallel illumination and scanning probe mode (i.e. STEM) has revealed morphological and structural transformations in self-assembled II-VI, III-V and group IV semiconductor quantum dots (QDs). These transformations result [...]

Simulating IMD in SiGe HBTs: How good are our models?

Wong P., Pejcinovic B., Portland State University, US
Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance [...]

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