Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs
Monga U., Fjeldly T.A., Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO
Statistical variability such as line edge roughness (LER) and random dopant effects have become major concerns in the nanoscale regime. Due to the intrinsic body, multigate devices such as FinFETs don’t suffer from random dopant [...]