Natl Nano Device Labs & Natl Chiao Tung Univ

Investigation of Robust Fully-Silicided NMOSFETs for Sub-100 nm ESD Protection Circuits Design

Lee J.W., Tang H., Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Electrostatic discharge (ESD) becomes an important issue in vary large scaled integrated (VLSI) circuit design and manufacture, especially for the ultra-thin oxide nano-devices [1-3]. It results from a fact that the gate oxide will be [...]

A Study of the Threshold Voltage Variations for Ultra-thin Body Double Gate SOI MOSFETs

Tang C-S, Lo S-C, Lee J.W., Tsai J-H, Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Double gate silicon on insulator (SOI) devices are more and more attractive for sub-50 nm ultra-large scaled integrated (ULSI) circuits manufacturing. The double gate SOI devices, owing to a difficulty of manufacturing uniformity, suffer fluctuations [...]

Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings

Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

We investigate the effect of spin-orbit interaction on the electron energy states in nanoscale semiconductor quantum rings. The effective one-band Hamiltonian approximation with the spin-dependent Ben Daniel-Duke boundary conditions is formulated and solved numerically. Due [...]

A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation

Lin H-Y, Li Y., Lin H-Y, Lee J.W., Chiu C-M, Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Excimer laser annealing technique has been proposed in the fabrication of low temperature polycrystalline silicon (LTPS) in the recent years, in particular for the applications to active-matrix liquid crystal display (AMLCD) [1]. In comparing with [...]

Gate Length Scaling Effects in ESD Protection Ultra-thin Body SOI Devices

Lee J.W., Li Y., Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

In this paper we experimentaly explore the gate length scaling effects which related to the abrupt degation of electrostatic discharge (ESD) robustness for ultra-thin body silicon on insulator (SOI) devices and integrated circuits (ICs). It [...]