National Chiao Tung University – Page 2

Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors

Shen C-H, National Chiao Tung University, TW

Amorphous silicon thin-film transistors (a-Si:H TFTs) are widely used in active-matrix backplanes for LCD displays on glass. Unfortunately, DC and dynamic characteristics of a-Si:H TFTs are sensitive [1]; in particular, they suffer form electric-field-induced threshold [...]

Simulation-Based Evolutionary Approach to Electrical Characteristic Optimization of Silicon Solar Cells

Lu Z-L, National Chiao Tung University, TW

Solar cell [1], which can provides renewable and clean energy by converting sunlight to electrical power, is one of the most promising energy technologies in order to relieve the impact of the climate change. Yet, [...]

High efficiency E. coli concentration via dynamic light-induced optoelectro-osmosis flow

Yang S.M., National Chiao Tung University, TW

We demonstrate a dynamic light-induced optoelectroosmosis flow design for E. coli concentration on an organic photoconductive material based biochip. Several traditional approaches of purification and enrichment for bacteria are to use magnetic beads coated with [...]

Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs

Cheng H-W, Chiu Y-Y, Lee Y-H, Li Y., National Chiao Tung University, TW

High-/metal gate (HKMG) is one of key technologies for sub-45-nm generations in nano-CMOS era [1-2]. However, using HKMG may introduce random work functions (WKs) on device’s metal gate due to various metal grain orientations [3-5]. [...]

Comprehensive Study on Reflectance of Si3N4 Subwavelength Structures for Silicon Solar Cell Applications Using 3D Finite Element Analysis

Lu Z-L, National Chiao Tung University, TW

Solar cell is one of the most promising renewable energy technologies in order to relieve the impact of the climate change. In semiconductor based solar cells, electron-hole pairs are generated via absorption of impinging photons. [...]

Shape Effect on the Reflectance of Sub-Wavelength Structures on Silicon Nitride for Solar Cell Application

Sahoo K.C., Li Y., Chang E.Y., National Chiao Tung University, TW

Sub-wavelength structure (SWS) on anti-reflection coating instead of semiconductor surface can improve the efficiency of silicon solar cell has been studied both numerically and experimentally recently. The shape of the SWS may be somewhat variable [...]

Shape Effect on the Reflectance of Sub-Wavelength Structures on Silicon Nitride for Solar Cell Application

Sahoo K.C., Li Y., Chang E.Y., National Chiao Tung University, TW

Sub-wavelength structure (SWS) on anti-reflection coating instead of semiconductor surface can improve the efficiency of silicon solar cell has been studied both numerically and experimentally recently. The shape of the SWS may be somewhat variable [...]

Electrical Characteristics of 16-nm-Gate Multi-Gate-and-Multi-Fin Devices and Digital Circuits

Cheng H-W, National Chiao Tung University, TW

In this work, we estimate electrical characteristics including threshold voltage (Vth) and gate capacitance (Cg) of 16-nm-gate multi-gate-and-multi-fin FETs, and delay time of an inverter and static noise margin (SNM) of a 6T SRAM. Large-scale [...]

Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors

Lee K-F, Han M-H, Lo I-S, Yiu C-Y, Li Y., National Chiao Tung University, TW

The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure [...]

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Han M-H, Li Y., National Chiao Tung University, TW

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) [...]