Motorola – Page 2 – TechConnect Briefs

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Ab Initio Modeling of Boron Clustering in Silicon

Windl W., Liu X-Y., Masquelier M.P., Motorola, US

We present results of ab initio calculations for the structure and energetic of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, and dissolution of such clusters. The structure of the [...]

Simulations for Optimized Piezoresistors

Mladenovic D., Vasileska D., Motorola, US

As a phenomenon, piezoresistive effect is well understood from the theoretical point of view. Experimental characterizations have also been done on a variety of uniformly doped samples. However, for modern LSI structures, with shallow diffused [...]

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Windl W., Stumpf R., Masquelier M., Bunea M., Dunham S.T., Motorola, US

First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]

Elements for Modeling Diffused Piezoresistor Temperature Coefficient and Sensitivity

Mladenovic D., Hutchins J., Tran E., Lu S., Motorola, US

This article reviews elements needed to be considered in order to improve accuracy of the temperature coefficient and sensitivity (span) simulation for diffused piezoresistors. Modeling is done through an algorithm developed in 'Mathematica'. Input parameters [...]

Simulation and Modeling of Optoelectronic Devices, Circuits and Systems

Morikuni J.J., Mena P.V., Harton A.V., Wyatt K.W., Motorola, US

Holographic optical elements fabricated from DuPont's OMNIDEXô photopolymer have been demonstrated in a variety of product prototypes in which optical interconnect and semiconductor optoelectronic devices are integrated. With the emergence of Fibre Channel, Gigabit Ethernet, [...]