Motorola SPS – TechConnect Briefs

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Sudhama C., Spulber O., McAndrew C., Thoma R., Motorola SPS, US

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions [...]

Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs

Sudhama C., Joardar K., Whitfield J., Zlotnicka A., Motorola SPS, US

The exploration and modeling of high-frequency MOSFET phenomena are vitally important because MOSFETs are emerging as candidates for active devices in front-end RF circuits operating at more than 1GHz [1-2]. In this work we present [...]

Genetic Algorithm Based MOSFET Model Parameter Extraction

Keser M., Joardar K., Motorola SPS, US

The Levenberg-Marquardt (LM) minimization algorithm commonly employed in MOSFET model parameter extraction has several known deficiencies, such as poor convergence characteristics without a good initial guess, low likelihood of convergence to the globally optimal solution, [...]