L2MP-CNRS – TechConnect Briefs

Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs

Munteanu D., Moreau M., Autran J-L, L2MP-CNRS, FR

Double-Gate structures with independent gates have been recently proposed, allowing a four terminal operation. Independent Double-Gate (IDG) MOSFETs offer additional potentialities, such as a dynamic threshold voltage control by one of the two gates, transconductance [...]

Compact modeling of drain current in Independently Driven Double-Gate MOSFETs

Munteanu D., Autran J-L, Loussier X., Tintori O., L2MP-CNRS, FR

As CMOS scaling is approaching its limits, Double-Gate (DG) MOSFET is envisaged as a possible alternative to the conventional bulk MOSFET. In spite of excellent electrical performances due to its multiple conduction surfaces, conventional DG [...]

Compact Modeling of Threshold Voltage in Double-Gate MOSFET including Quantum Mechanical and Short Channel Effects

Nehari K., Munteanu D., Autran J-L, Harrison S., Tintori O., Skotnicki T., L2MP-CNRS, FR

Compact modeling of Double-Gate MOSFET incites very much interest presently, since DG is considered to be the best candidate for the integration at the end-of-roadmap. The aim of this work is to develop a short-channel [...]

A Compact Model for the Threshold Voltage of Silicon Nanowire MOS Transistors including 2D-Quantum Confinement Effects

Nehari K., Autran J-L, Munteanu D., Bescond M., L2MP-CNRS, FR

A quantum-mechanical compact model of the threshold voltage for quantum-wire (QW) MOSFETs has been developed. This approach is based on analytical 2D solutions for the decoupled Schrödinger and Poisson equations solved in a 2D cross-section [...]