A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles
Stuchinsky V.A., Kamaev G.N., Efremov M.D., Arzhannikova S.A., Institute of Semiconductor Physics, RU
A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.