Nanosecond Range Heating and Temperature Measurement on Thin Layers Experiment and Simulation
Hartmann J., Heyde M., Moritz W., Rademann K., Reichling M., Roth U., Humboldt Universitat zu Berlin, DE
A chemical semiconductor sensor for oxygen gas was activated by thermal treatment. The thin Pt layer of the n-Si/SiO2/Si3N4/LaF3/Pt field effect structure was used as the gate electrode for sensitivity measurements, heating resistance and temperature [...]