Comparison of Four-terminal DG MOSFET Compact Model with Thin Si channel FinFET Devices
Nakagawa T., Sekigawa T., Tsutsumi T., Liu Y., Hioki M., O’uchi S., Koike H., Electroinformatics Group, JP
We have proposed a compact model for four-terminal double-gate MOSFETs based on double charge-sheet model. The model can handle asymmetric gate structure such as different gate-oxide thickness, as well as independent gate voltage for two [...]