Agere Systems – TechConnect Briefs

A Circuit-Compatible Model for Ballistic Silicon Nanowire Transistors

Chen J., Agere Systems, US

Silicon nanowire transistors (SNWT) are being extensively explored as a successor to CMOS. Silicon nanowires with a diameter as small as 2nm and having high carrier mobility have been achieved. Such developments shed light on [...]

USIM Design Considerations

Bell A., Singhal K., Gummel H., Agere Systems, US

Compact models need to be carefully designed to predict circuit behavior efficiently, accurately and robustly. A variety of effects must work together and be consistently integrated into the model equations with redundancy. USIM is a [...]

Tilt-angle Stabilization of Electrostatically Actuated Micromechanical Mirrors

Chen J.H., Weingar W., Azarov A., Giles R.C., Agere Systems, US

Recently proposed optical subsystems utilizing micro-electromechanical components are being developed for use in photonic crossconnects, optical add/drop multiplexers, and spectral equalizers. Common elements to these subsystems are electrostatically actuated micromechanical tilt mirrors that steer optical [...]

USIM Design Considerations

Bell A., Singhal K., Gummel H., Agere Systems, US

Compact models need to be carefully designed to predict circuit behavior efficiently, accurately and robustly. A variety of effects must work together and be consistently integrated into the model equations with redundancy. USIM is a [...]

Tilt-angle Stabilization of Electrostatically Actuated Micromechanical Mirrors

Chen J.H., Weingar W., Azarov A., Giles R.C., Agere Systems, US

Recently proposed optical subsystems utilizing micro-electromechanical components are being developed for use in photonic crossconnects, optical add/drop multiplexers, and spectral equalizers. Common elements to these subsystems are electrostatically actuated micromechanical tilt mirrors that steer optical [...]

Measurements and Modeling of Mobility in Ultra-Thin SOI

Mastrapasqua M., Esseni D., Fiegna C., Agere Systems, US

We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm [...]

Development of a MEMS Vertical Planar Coil Inductor

Chen J., Zou J., Liu C., Kang S-M, Agere Systems, US

This paper presents the results of the development of a vertical planar coil inductor. The planar coil inductor is first fabricated on silicon substrate and then assembled to the vertical position by using a novel [...]